Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

• Mengqi Fu,
• Roman Hartmann,
• Julian Braun,
• Sergej Andreev,
• Torsten Pietsch and
• Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

• of STT-assisted resistance switching in multilayered nanowires, raw data before the background subtraction, a schematic diagram of the four-point measurements at low temperature, 2D color maps of (dV/dI)red over a larger current range and under upsweep of the magnetic field, the potential influence

Amorphized length and variability in phase-change memory line cells

• Nafisa Noor,
• Sadid Muneer,
• Raihan Sayeed Khan,
• Anna Gorbenko and
• Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

• ) Approximate circuit model of an experimental setup with measured parasitic capacitance and resistance values. (b) Simplified circuit model simulated in SPICE with the measured Vch1 and Vch3,4 waveforms. (c) Modeling of GST resistance switching with three switches in SPICE. (a) Logarithmic upward drift of the

Characterization of electroforming-free titanium dioxide memristors

• John Paul Strachan,
• J. Joshua Yang,
• L. A. Montoro,
• C. A. Ospina,
• A. J. Ramirez,
• A. L. D. Kilcoyne,
• Gilberto Medeiros-Ribeiro and
• R. Stanley Williams

Beilstein J. Nanotechnol. 2013, 4, 467–473, doi:10.3762/bjnano.4.55

• non-volatile resistance-switching behavior and have been identified with the concept of the memristor. Microphysical studies suggest that the development of sub-oxide phases in the material drives the resistance changes. The creation of these phases, however, has a number of negative effects such as

• dramatically reduced microphysical changes after electrical operation. Keywords: electron microscopy; memristor; resistance switching; transition-metal oxide; X-ray spectroscopy; Introduction A memristor is a passive electronic element that displays a pinched hysteresis loop in its current–voltage

• characteristic, including the resistance switching that is seen in metal–insulator–metal (MIM) devices, often called resistive random access memory (RRAM or ReRAM). The memristor concept was developed by Chua [1][2], and much later associated with the behaviors seen in a range of nanoscale devices [3][4]. In

The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

• César Moreno,
• Carmen Munuera,
• Xavier Obradors and
• Carmen Ocal

Beilstein J. Nanotechnol. 2012, 3, 722–730, doi:10.3762/bjnano.3.82

• (Stanford Systems) was used to gain access to a wide range of compliance currents (1 pA to 1 mA). Resistance-switching sequence: Writing and reading of local conductance modifications made on the LSMO surface. The transition between low-resistive (LR) and high-resistive (HR) states is performed by writing

• Vtip > 0 (see scale bar). Resistance-switching sequence: Erasing back to a LR state starting from the local HR (nonconducting) modification, performed on the LSMO surface at Vwr = +4 V. The nonconducting character of the written region (white square) is reversed by changing the voltage polarity: (a